(3) M/a Com S C-band 1.6w 2.5-5.5 Ghz Rf Power Amplifier Maapgm0035 Microwave

US $567

San Jose, California, United States
Oct 25th

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This is a Brand New (3) M/A Com S/C-Band 1.6W 2.5-5.5 GHz Power Amplifier MAAPGM0035. These are mil-spec components, typically used on SatCom , MMDS , WLL used by weather radar, surface ship radar, and some communications satellites, especially those used by NASA to communicate with the Space Shuttle and the International Space Station. NOTE: This part isn’t available for export. ? 1.6 Watt Saturated Output Power Level ? Variable Drain Voltage (4-10V) Operation ? MSAG Process ? On-Chip Bias Ladder Features 2.5-5.5 GHz Operation 1.6 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation Self-Aligned MSAG® MESFET Process Description The 1.6 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage as a driver stage in high power applications. Each device 100% RF tested on wafer to ensure performance compliance. The part is fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG®) MESFET Process. This process features silicon nitride passivation and polyimide scratch protection. Electrical Characteristics: 50 , VDD = 8V, VGG = -2V, Pin = 20 dBm Parameter Bandwidth Output Power Added Efficiency 1-dB Compression Point Small Signal Gain Input VSWR Gate Current Drain Current Output Third Order Intercept Noise Figure 2nd Harmonic 3rd Harmonic Symbol f POUT PAE P1dB G VSWR IGG IDD OTOI 2f 3f Typical mA dBm dB dBc Units GHz dBm % dBm dB 1.6W S/C-Band Power Amplifier Maximum Operating Conditions 1 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Symbol PIN VDD VGG IDQ PDISS TJ TSTG Absolute Maximum to +150 1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may result in performance outside the guaranteed limits. Characteristic Drain Voltage Gate Voltage Input Power Junction Temperature MMIC Base Temperature Symbol VDD VGG PIN TJ TB Min 4.0 -2.3 Typ 8.0 -2.0 Max Note 2 Unit V dBm °C This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG -2 V, VDD= V. 2. Ramp VDD to desired voltage, typically V. 3. Adjust VGG to set IDQ, (approximately @ 2 V). 4. Set RF input. 5. Power down sequence in reverse. Turn gate V 1.00 Visit www.macom.com for additional data sheets and product information. Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V and Pin = 20 dBm. Total Parts will guarantee you're totally happy with your purchase! 14 Day Return Policy if merchandise is in unused condition. We promise to ship your merchandise fast! We promise to send you tracking information immediately when shipped! We promise to respond to your questions and concerns! If you have any questions, concerns or suggestions please contact us through the eBay messaging system. Please take a moment to see our current specials on eBay our other eBay listings. Powered by SixBit's eCommerce Solution