50x Kt645b Transistor - Amplifying, Epitaxial-planar, Silicon, N-p-n. Ussr

US $10.00

OMSK, Russian Federation
Aug 30th

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1LOT - 50PCS A small amount is written in the customs Declaration After sending the lot the tracking number will be sent If you buy multiple lots or items from the store, the total delivery price is discussed with the seller !!! KT645B silicon transistors are epitaxial-planar structures of n-p-n high-speed, high-frequency. Designed for use in high-frequency generators and amplifiers, in high-speed pulse devices. * Transistor structure: n-p-n; * Pk max-Constant dissipated collector power: 0.5 W; • fгр - the Boundary frequency of coefficient of transfer of current of the transistor for schemes with the General emitter: not less than 200 MHz; • * LCBO max - Maximum voltage collector-base for a given reverse current collector and open-circuit emitter: 40 V; • * Uобр max - the Maximum tension the emitter base at the set reverse current of the emitter and the opened collector chain: 4 In; * Ic max - The maximum permissible direct collector current: 0.3 A; * Icbo-Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 10 µA (60V); * h21e-Static current transfer coefficient of the transistor for circuits with a common emitter: more than 80; * Sc-Collector junction capacity: no more than 5 pF

Condition:	New: A brand-new, unused, unopened, undamaged item in its original packaging (where packaging is applicable). Packaging should be the same as what is found in a retail store, unless the item was packaged by the manufacturer in non-retail packaging, such as an unprinted box or plastic bag. See the seller's listing for full details. ...	Country/Region of Manufacture	Russian Federation
Non-Domestic Product	No
Custom Bundle	No
Model	KT645B
Type	NPN
Modified Item	No
MPN	Does Not Apply
Transistor Type	PNP BJT
Brand	USSR