Aop605 Complementary Enhancement Mode Field Effect Transistor Mosfet

US $110

  • Beverly Hills, California, United States
  • Nov 20th
AOP605 Complementary Enhancement Mode Field Effect Transistor By Alpha Omega Semiconductor The AOP605 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AOP605 is Pb-free (meets ROHS & Sony 259 specifications). DATASHEET FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7.5A, 6.6A Rds On (Max) @ Id, Vgs 28 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) @ Vgs 16.6nC @ 4.5V Input Capacitance (Ciss) @ Vds 820pF @ 15V Power - Max 2.5W Mounting Type Through Hole Package / Case 8-DIP (0.300", 7.62mm) Supplier Device Package 8-PDIP Other Names 785-1140-2 TERMS OF SALE We welcome FPO/APO/Military Orders.  APO/FPO ships at domestic rates. New Bidders, International bidders welcome - we are flexible on customs declarations. Any questions eoi at lunaticlabs.biz  WINDHAGBATS 

Directions

Similar products from General & Complementary Transistors

People who viewed this item also vieved

By clicking "Accept All Cookies", you agree to the storing of cookies on your device to enhance site navigation, analyze site usage, and assist in our marketing efforts.

Accept All Cookies