Irf9z20 (2 Items)

US $3.35

Hialeah, Florida, United States
Jan 29th

Open on mobile:
QR code

RF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY ? P-Channel Versatility VDS (V) - 50 Available ? Compact Plastic Package RDS(on) (?)VGS = - 10 V 0.28 RoHS* ? Fast Switching COMPLIANT Qg (Max.) (nC) 26 ? Low Drive Current Qgs (nC) 6.2 ? Ease of Paralleling Qgd (nC) 8.6 ? Excellent Temperature Stability ? Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION S The Power MOSFET technology is the key to Vishay?s TO-220AB advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET G design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The P-channel Power MOSFET?s are designed for application which require the convenience of reverse S D polarity operation. They retain all of the features of the more G D common N-channel Power MOSFET?s such as voltage P-Channel MOSFET control, very fast switching, ease of para ype Designator: IRF9Z20 Type of IRF9Z20 transistor: MOSFET Type of control channel: P -Channel Maximum power dissipation (Pd), W: 40 Maximum drain-source voltage |Uds|, V: 50 Maximum gate-source voltage |Ugs|, V: Maximum drain current |Id|, A: 9.8 Maximum junction temperature (Tj), °C: 150 Rise Time of IRF9Z20 transistor (tr), nS: Drain-source Capacitance (Cd), pF: Maximum drain-source on-state resistance (Rds), Ohm: Package: TO220

Condition:	New: A brand-new, unused, unopened, undamaged item in its original packaging (where packaging is applicable). Packaging should be the same as what is found in a retail store, unless the item is handmade or was packaged by the manufacturer in non-retail packaging, such as an unprinted box or plastic bag. See the seller's listing for full details. ...	Brand	IDT
MPN	NITED STATES
Model	IRF9Z20
Country of Manufacture	United States