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KT819G = 2N5496, 2N6292, BD203, BD537, BD711 Transistor USSR Lot of 10 pcs, US $150 – Picture 0
KT819G = 2N5496, 2N6292, BD203, BD537, BD711 Transistor USSR Lot of 10 pcs, US $150 – Picture 0

Kt819g = 2n5496, 2n6292, Bd203, Bd537, Bd711 Transistor Ussr Lot Of 10 Pcs

US $150

  • Lovech, default, Bulgaria
  • May 25th
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KT819G = 2N5496, 2N6292, BD203, BD537, BD711 Transistor USSR Lot of 10 pcs KT819G Silicon Transistors mezaepitaksialno-planar structure of the npn switching. Designed for use in amplifiers and switching devices. The main technical characteristics of the transistor KT819G: • The structure of the transistor: npn; • Pk max - Constant power dissipation Collector: 1.5W; • Pk t max - Dissipated power collector with heat: 60 W; • fgr - Cut-off frequency of the transistor current gain for the common-emitter: no less than 3 MHz; • Uker max - maximum collector-emitter voltage at a given current collector and a given resistance in the circuit of the base-emitter voltage: 100 V (0.1 ohm); • Uebo max - Maximum voltage emitter-base junction reverse current at a given emitter and collector open circuit: 5 V; • Ik max - Maximum DC Collector Current: 10 A; • Ik and max - Maximum pulse collector current: 15 A; • Ikbo - Reverse collector current - the current through the collector junction reverse voltage for a given collector-base and open emitter output: less than 1 mA (40V); • h21e - Static current transfer ratio of the transistor to the common-emitter: more than 12; • Rke us - saturation resistance between the collector and emitter: no more than 0.4 ohms YOU RECEIVE WHAT YOU SEE !!!

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