Nte21256 21256 - Nos- Qty:2

US $7.50

  • Auburn, Washington, United States
  • Jan 29th
Manufacturer's Description: The NTE21256 is a 262,144 word by 1–bit dynamic Random Access Memory.  This 5V–only component is fabricated with N–channel silicon gate technology. Nine multiplexed address inputs permit the NTE21256 to be packaged in an industry standard 16–Lead DIP package.  Features of this device include single power supply with ±10% tolerance, on– chip address, date registers which eliminate the need for interface registers, and fully TTL compatible inputs and outputs, including clocks. In addition to the usual read, write, and read–modify–write cycles, the NTE21256 is capable of early and late write cycles, RAS–only refresh, and hidden refresh.  Common I/O capability is given by using early write operation. The NTE21256 also features page mode which allows high–speed random access of bits in the same row. Free 1st Class Shipping (Con-US) New in original anti-static bag.
Condition:
New: A brand-new, unused, unopened, undamaged item in its original packaging (where packaging is applicable). Packaging should be the same as what is found in a retail store, unless the item is handmade or was packaged by the manufacturer in non-retail packaging, such as an unprinted box or plastic bag. See the seller's listing for full details. ...
Brand NTE
MPN NTE21256
Model NTE21256

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