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NXP BLF578 1200W VHF RF Power Transistor, US $119.95 – Picture 0
NXP BLF578 1200W VHF RF Power Transistor, US $119.95 – Picture 0

Nxp Blf578 1200w Vhf Rf Power Transistor

US $119.95

  • Peabody, Massachusetts, United States
  • Jun 9th
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NXP BLF 578 (non “XR”) A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.  This is NOT a "knock-off" product 1.2Features Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 ?s with ? of 20 %: Output power = 1200 W Power gain = 24 dB Efficiency = 71 % Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (10 MHz to 500 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3Applications Industrial, scientific and medical applications Broadcast transmitter applications Link to datasheet & application notes: http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/rf_energy_ism/0_500_mhz_ism_xr_products/BLF578.html

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