Plasmos Sd 2300 Automatic Ellipsometer (metrology) Sd2300

US $6,900.00

  • Alluyes, France
  • Jan 30th
 PLASMOS SD 2300 Automatic Ellipsometer (Metrology) SD2300 sale includes only what is in the pictures Hello Feel free to send us a proposition price, we are open to offers Thank you in advance ********************************************                       description (non contractuelle):   General Description: The PLASMOS SD series Thin Film Thicknesss Measurement System work according to the ellipsometer principle, using the rotating analyzer method. The SD series is characterized by the following user features: ·  light source unit provided a 632.8 nm He-Ne laser and/or one or two laser diodes of 790 nm or 1.3/1.55 µm for thicknesss measurements absorbing layers. ·  simple menu-driven operation of the system software by means of function keys supported by the user friendly window technique. The system (production mode) is therefore suitable for use in routine measurements, but also for research (engineering mode). ·  integrated, clean-room compatible construction as a compact system, stainless-steel frame with stainless-steel perforated sheet metal, covers, and panels of anodized aluminium or stainless steel. ·  optional laminar flowbox with integrated lighting and compatible in construction and design. (*) ·  the microscope-type sample stage works according to an automatically controlled X-Y grid principle with infinitely variable step size. Measurements in integrated circuit (microspot) are possible (*). ·  exhaustive and informative display of the measurement results in tables, graphs, color graphs, and 3-D displays. Refraction index and layer thickness can be determined for any given measurement. Both parameters can be portrayed as both graphics and list diplays. (*)(**) ·  extremely short measurement times for routine measurements (1 sec/point with SD 2300/4000/2000) ·  to avoid particle generation above the wafer surfaces a CCD camera and monochrome monitor is available as an option. (*)(**) ·  sample stage with an integrated vacuum plate, suitable for wafers up to 200 mm diameter, with a built-in quick action switch-off system for the vacuum. (*) ·  optional vacuum tweezers for manual wafer handling. (*) ·  optional automatic wafer handling system cassette in cassette for wafers up to 200 mm diameter. (*)(**) ·  optional communication with a host computer via SECS/I/II protocol (*)(**) ·  optional pattern recognition system, including all software. (*)(**) ·  automatic foccusing unit (optional for SD 2000) ·  full concolse housing made of antistatic material, compatible to any production environement (optional for SD 2000) The Principle of measurement: With the PLASMOS SD series layer thicknesss measurement system film thickness and refraction index of optically transparent and absorbing layers can be determined. The measurements can be made at incidence angles between 35° and 73°/90°. The SD 2000 is a rotating analyzer system. Unpolarized light from a He Ne laser or a laser diode (*) is directed through a polarizer to produce linearly polarized light and then, through a quarter-wave plate (compensator) to get circularly polarized light. The laser beam finally hits the sample surface at an exactly defined angle of incidence. With the SD 2000, the polarizer is kept at an fixed azimuth angle of 45°. The analysis of the status of polarization is done by a permanently rotating polarizer followed by a photo-detector again, whose sinoidal output signal is transferred again to the system computer for the calculation of the layer thickness and refraction index. Possible Applications: The ellipsometer measurement principle is an optical measurement technique for determining the film thickness and refractive index of optically transparent and absorbing layers, in the range between a few A and a few µm. The measurement technique is utilized in semiconductor technology, optics, tribology, compact disk technology and physical surface examinations. With the ellipsometer, the following types of thin films can be measured: dielectric and semiconducting layers, such as silicon dioxide, silicon nitride, polysilicon and amorphous silicon, interference layers, various metallic layers, and organic layers such as carbon and photoreists. Optically transparent sample films can be measured, as well as multiple layer systems (refraction index and thickness of films). For absorbing layers (e.g., semiconductors and metals), the complex refractive index and thickness can be determined when knowing one or the other. In addition to the above mentioned applications, liquids can be measured, as well as thin foils (self-supporting). The optical constants of substrate materials can also be determined (substrate program).

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