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1T308V / GT308V = AF109 Germanium Transistor USSR 20V Lot of 10 pcs , US $256 – Picture 0
1T308V / GT308V = AF109 Germanium Transistor USSR 20V Lot of 10 pcs , US $256 – Picture 0

1t308v / Gt308v = Af109 Germanium Transistor Ussr 20v Lot Of 10 Pcs 

US $256

  • Vilnius, default, Lithuania
  • Nov 2nd
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  The main technical characteristics of the transistor 1T308V: • Structure: p-n-p • Pk max - Constant power dissipation Collector: 150 mW; • Fgr - Cut-off frequency of the transistor current gain for the common-emitter and common-base: at least 120 MHz; • Ukbo - Breakdown voltage collector-base for a given reverse current collector and emitter open circuit: 20 V; • Uebo - Breakdown voltage emitter-base junction reverse current at a given emitter and collector open circuit 3; • Ik max - Maximum DC Collector Current: 50 mA; • Ikbo - Reverse collector current - the current through the collector junction reverse voltage for a given collector-base and open emitter output: less than 2 mA; • h21E - Static current transfer ratio for the common-emitter large-signal: 80 ... 200 (1B; 10mA); • CK - collector junction capacity: up to 8 (5B); • Rke us - saturation resistance between the collector and emitter: less than 24 ohms; • Rm - Noise Transistor no more than 8 dB (1.6 MHz); • tc - time constant of the feedback loop at high frequency: less than 400 ps FEEDBACK. As advised by eBay's Customer Services I leave feedback for my customers after feedback received. It shows that buyer received an item and everything is OK. Thank you. Спасибо!

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