General Electric Semiconductor Device,diode A139p Us Army Me43800200003a

US $10.00

  • Farmingdale, New York, United States
  • Jun 9th
GENERAL ELECTRIC SEMICONDUCTOR DEVICE,DIODE MODEL A139P US ARMY P/N ME43800200003A  NSNs: 5961-01-013-8811 & 5961-01-232-4770. .HONEYWELL P/N 653-080-9004 NOS CONDITION. OPENED FOR PHOTO. ORIGINAL PACKAGE. PACK DATE 7/80 Name Value INCLOSURE MATERIAL METAL OVERALL LENGTH 0.450 INCHES MAXIMUM OVERALL HEIGHT 0.450 INCHES MAXIMUM OVERALL WIDTH 0.687 INCHES MAXIMUM MOUNTING FACILITY QUANTITY 1 ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE CATHODE MOUNTING METHOD THREADED STUD FEATURES PROVIDED HERMETICALLY SEALED CASE NOMINAL THREAD SIZE 0.250 INCHES SEMICONDUCTOR MATERIAL SILICON VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 1000.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS CURRENT RATING PER CHARACTERISTIC 25.00 AMPERES FORWARD CURRENT, AVERAGE MAXIMUM MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 125.0 DEG CELSIUS AMBIENT AIR THREAD SERIES DESIGNATOR UNF TERMINAL TYPE AND QUANTITY 1 TAB, SOLDER LUG AND 1 THREADED STUD
Condition:
New other (see details): A new, unused item with absolutely no signs of wear. The item may be missing the original packaging, or in the original packaging but not sealed. The item may be a factory second or a new, unused item with defects. See the seller’s listing for full details and description of any imperfections. ...
Brand GENERAL ELECTRIC CO
MPN ME43800200003A US ARMY
Model A139P
Country/Region of Manufacture United States

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