Igbt Skm151a4r Module, Semikron, High Power 500v, 70a, Quantity = 2

US $20.00

Smithtown, New York, United States
Jul 20th

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You are bidding on a quantity of (2) SKM151A4R high power IGBT modules manufactured by Semikron. Features: • N Channel, enhancement mode • Short internal connections avoid oscillations • With built-in gate resistor chips ("R")Rg total = 1.3ohms • Without hard world (environmental aspects) • Isolated copper baseplate using DOB Direct Copper Bonding Ceramic • All electrical connections on top for easy busbarring • Large clearance (10 mm) and creepage distances (13 mm) • UL recognized, file no. E63 532 Typical Applications: • Switched mode power supplies • DC servo and robot drives • DC choppers • Resonant and welding inverters • AC motor drives • Laser power supplies • UPS equipment Absolute Maximum Ratings: Symbol Conditions Values VDS 500 V VDGR RGE = 20 kohm 500 V ID Tc=25/80°C 70/50 A IDM Tc=25/80 °C 280/200 A VGS +/- 20 V PD 780 W Tj, (Tstg) -40 ~ +150(125) °C Visol AC, 1 min. 2500 V humidity DIN 40 040 Class F climate DIN IEC68 T.1 40/125/56 Inverse Diode lF = -ID Tc = 25/80°C 70/50 A IFM = -IDM Tc = 25/80°C 280/200 A Characteristics: Symbol Conditions min. typ. max. Units V(BR)DSS VGS = 0, ID = 0.25 mA 500 - - V VGS(th) VGS = VDS, lD=1mA 2.1 3.0 4.0 V IDss VGS = 0 Ti= 25°C - 1 250 uA VDS = 500V Tj = 125°C - 300 1000 uA lGSS VGS = 20 V, VDS = 0 - 10 100 nA RDS(on) VGS = 10V, ID = 50A - 50 70 mohm gfs VDS = 25V, ID = 50A 48 90 - S CCHC VGS = 0, VDS = 25V, f = 1 MHz - - 160 pF CISS VGS = 0, VDS = 25V, f = 1 MHz - 15 20 nF Coss VGS = 0, VDS = 25V, f = 1 MHz - 1.9 2.9 nF Crss VGS = 0, VDS = 25V, f = 1 MHz - 0.72 1.1 nF LDS - - 30 - nH td(on) VDD=250V, ID = 30A, VGS = 10V, RG = 4.7 ohm - 60 - ns tr VDD=250V, ID = 30A, VGS = 10V, RG = 4.7 ohm - 100 - ns td(off) VDD=250V, ID = 30A, VGS = 10V, RG = 4.7 ohm - 500 - ns tf VDD=250V, ID = 30A, VGS = 10V, RG = 4.7 ohm - 120 - ns Inverse Diode VSD IF = 120A, VGS = 0V, Tj= 25°C - 1.0 1.4 V trr IF = 120A, VGS = 0V, Tj= 25°C - 450 - ns Qrr IF = 120A, VGS = 0V, Tj= 25°C - 36 - uC Thermal characteristics Rthjc - - 0.16 °C/W Rthch M1, surface 10um - - 0.05 °C/W Mechanical Data M1 to heatsink, SI Units 4 - 6 Nm to heatsink, US Units 35 - 53 Ib.in. M2 for terminals, SI Units 2.5 - 3.5 Nm for terminals, US Units 22 - 24 Ib.in. a - - 5x9.81 m/s^2 w - - 150 g Buyer agrees to complete transaction within two days of auction end. We ship USPS Priority Flat Rate for reliability and expediency within two business days of transaction completion. We can combine orders to possibly save you $$$ on shipping, so please view our other items. Good bidding!

“Pulled from working system, tested and returned to stock.”

MPN

GS2

Function

Power Transistor

Brand

SEMIKRON

Transistor Type

IGBT

Model

SKM151A4R