IZO Sputtering Target Bonded to Copper Plate, US $1,250.00 – Picture 0

IZO Sputtering Target Bonded to Copper Plate, US $1,250.00 – Picture 1

IZO Sputtering Target Bonded to Copper Plate, US $1,250.00 – Picture 2

IZO Sputtering Target Bonded to Copper Plate, US $1,250.00 – Picture 3

IZO Sputtering Target Bonded to Copper Plate, US $1,250.00 – Picture 4

IZO Sputtering Target Bonded to Copper Plate, US $1,250.00 – Picture 5

IZO Sputtering Target Bonded to Copper Plate, US $1,250.00 – Picture 6

Izo Sputtering Target Bonded To Copper Plate

US $1,250.00

Watsonville, California, United States
Jan 30th

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Item: Conductive IZO sputtering target Bonded to Copper Plate Item Condition: USED, in opened manufacturer bag. Outer Copper Dimension: 20.25"L x 5.25"W x .25"Thick ITO Material Dimension: 19.9375"L x 4.9375"W x .25"Thick IZO Description: Indium oxide doped with tin oxide, IZO, is used to make transparent conductive coatings which will be used for plane indicator such as LCD, ELD, and ECD. The zinc doped indium oxide (IZO) films deposited with various sputter parameters such as, film thickness ranging from 200 to 500 nm, O2/Ar ratio ranging from 0% to 12%, and sputter power ranging from 100 to250W was studied in this work. For a 200 nm thick IZO film grown at room temperature in pure argon atmosphere, the resistivity was 2.4x10–4 ohm cm and the average transmittance in the visible region was 80%. The root mean square roughness of IZO film was around 0.4 nm regardless of the film thickness due to the IZO films exhibiting an amorphous structure. With increasing film thickness, the IZO films showed an increase in the resistivity and energy band gap. X-ray photoelectron spectroscopy analysis suggests that the IZO films with reduction of O2/Ar ratio possess two splitting O 1s binding energy levels, suggesting the IZO films were oxygen deficient and resulted in a lower resistivity. Sigma-Aldrich Item Description: The need to develop a substitute for ITO lm has become increasingly urgent. Amorphous indium zinc oxide (IZO) lms with low resistivity, high transmittance, high etching rate and excellent surface smoothness can easily be prepared at a low deposition temperature. A smooth surface also o ers the possibility of improved electron transport performance, without interface roughness scattering or grain boundaries. Therefore, an amorphous IZO lm is the best candidate for the production of high-quality transparent conducting electrodes for OLEDs and flexible displays. In this study, we prepared IZO lms at room temperature by using a facing targets sputtering (FTS) system. A FTS system consists of two targets facing each other and a substrate located to one side of the center line between the two targets. Magnetic fi elds are applied perpendicular to the surfaces of the two targets. By using a low voltage and high current, a FTS system can suppress the bombardment of the substrate by hot particles. Thus, a FTS system can deposit thin fi lms without stress at a low working gas pressure and a low temperature. We investigated the electrical, optical and crystallographic properties of IZO thin lms prepared using a FTS system.

Condition:	New other (see details): A new, unused item with absolutely no signs of wear. The item may be missing the original packaging, or in the original packaging but not sealed. The item may be a factory second or a new, unused item with defects. See the seller’s listing for full details and description of any imperfections. ...	Model	IZO Sputtering Target bonded to Copper plate
Brand	Umicore Group