Kt903b Power Silicon Npn Transistors Made In Ussr Lot Of 2 Pcs

US $3.99

Orenburg, ural, Russian Federation
Jan 29th

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Main technical parameters KT903B: Transistors KT903B silicon metaplasia structure of n-p-n generator. Designed for use in power amplifiers and oscillators. • Structure of the transistor: n-p-n; • RK t max - Continuous collector power dissipation collector dissipation: 30 W; • f?? - Boundary frequency current transfer ratio of the transistor for the circuit with common emitter: more than 120 MHz; • U??? max - Maximum voltage collector-base for a given reverse collector current and open circuit of the emitter: 60 In; • U??? max - Maximum voltage emitter-base at a specified reverse current of the emitter and open circuit collector: 4 In; • IC max - Maximum collector current: 3 A; • VBE and max - the Maximum permissible pulse current collector: 5 A; • CBO Reverse collector current is the current through the collector transition at a given reverse voltage collector-base and open the output of the emitter: no more than 10 mA (70 V); • h21? - Static current transfer ratio of the transistor for circuits with common-emitter: 40... 180; • IC - collector Capacitance: 180 pF; • R?? us - Impedance saturation between the collector and the emitter: no more than 1 Ohm; • Pout - output power transistor is not less than 10 watts at a frequency of 50 MHz We accept PayPal Only!

Condition:	New: A brand-new, unused, unopened, undamaged item in its original packaging (where packaging is applicable). Packaging should be the same as what is found in a retail store, unless the item is handmade or was packaged by the manufacturer in non-retail packaging, such as an unprinted box or plastic bag. See the seller's listing for full details. ...	Brand	USSR
Country/Region of Manufacture	Russian Federation
Model	KT903B