Mj15022/mj15023 + (bonus)factory Matched, Recovered And Tested On Tektronix 576

US $260

  • Rainier, Oregon, United States
  • Aug 19th
SET OF 2 x MJ15022 / 2 x MJ15023 FREE 1 x MJE243 / 1 x MJE253 DRIVER TRANSISTORS WITH TD5 MICROSWITCH RECOVERED FROM OBSOLETE SPARE BOARDS FOR INVENTORY USED ON HIGH TEST ANALOG EQUIPMENT, OTHERWISE FULLY FUNCTIONAL.THIS COMPONENTS ARE FACTORY MATCHED.  TESTED ON TEKTRONIX 576 CURVE TRACER BEFORE SHIPPING. BELOW  LIST OF PARAMETERS FOR ALL OF THEM. MJE243 Datasheet, Equivalent, Cross Reference Search Type Designator: MJE243 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 15 W Maximum Collector-Base Voltage |Vcb|: 100 V Maximum Collector-Emitter Voltage |Vce|: 100 V Maximum Emitter-Base Voltage |Veb|: 7 V Maximum Collector Current |Ic max|: 4 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 40 MHz Collector Capacitance (Cc): 50 pF Forward Current Transfer Ratio (hFE), MIN: 40 Noise Figure, dB: - Package: TO126 MJE253 Datasheet, Equivalent, Cross Reference Search Type Designator: MJE253 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 15 W Maximum Collector-Base Voltage |Vcb|: 100 V Maximum Collector-Emitter Voltage |Vce|: 100 V Maximum Emitter-Base Voltage |Veb|: 7 V Maximum Collector Current |Ic max|: 4 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 40 MHz Collector Capacitance (Cc): 70 pF Forward Current Transfer Ratio (hFE), MIN: 40 Noise Figure, dB: - Package: TO126 MJ15022 Datasheet, Equivalent, Cross Reference Search Type Designator: MJ15022 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 250 W Maximum Collector-Base Voltage |Vcb|: 350 V Maximum Collector-Emitter Voltage |Vce|: 200 V Maximum Emitter-Base Voltage |Veb|: 7 V Maximum Collector Current |Ic max|: 16 A Max. Operating Junction Temperature (Tj): 200 °C Transition Frequency (ft): 4 MHz Collector Capacitance (Cc): 500 pF Forward Current Transfer Ratio (hFE), MIN: 15 Noise Figure, dB: - Package: TO3 MJ15023 Datasheet, Equivalent, Cross Reference Search Type Designator: MJ15023 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 250 W Maximum Collector-Base Voltage |Vcb|: 350 V Maximum Collector-Emitter Voltage |Vce|: 200 V Maximum Emitter-Base Voltage |Veb|: 7 V Maximum Collector Current |Ic max|: 16 A Max. Operating Junction Temperature (Tj): 200 °C Transition Frequency (ft): 4 MHz Collector Capacitance (Cc): 500 pF Forward Current Transfer Ratio (hFE), MIN: 15 Noise Figure, dB: - Package: TO3
PROFESSIONAL RECOVERED FROM OBSOLETE ANALOG TESTING EQUIPMENT, TESTED ON TEKTRONIX 576 CURVE TRACER, FACTORY MATCHED,
Country/Region of Manufacture United States
Collector-Emitter/Drain-Source Voltage 200
Custom Bundle No
Power Dissipation 250
Mounting Style Through-Hole
Continuous Collector/Drain Current 16
Type NPN/PNP
Emitter-Base/Gate-Drain Voltage 7
Transistor Category Power Transistor
Function Power Transistor
MPN Does Not Apply
Collector-Base/Gate-Source Voltage 350
Brand Motorola
Transistor Type NPN / PNP
Modified Item No

Directions

Similar products from General & Complementary Transistors

People who viewed this item also vieved

By clicking "Accept All Cookies", you agree to the storing of cookies on your device to enhance site navigation, analyze site usage, and assist in our marketing efforts.

Accept All Cookies