Mosfet Fds89161 100v Dualn-channel 2.7a

US $1.55

  • Hialeah, Florida, United States
  • Jan 29th
 Fabricante: Fairchild Semiconductor Categoria de producto: MOSFET RoHS:  Detalles Polaridad del transistor: N-Channel Vds - Tension disruptiva entre drenaje y fuente: 100 V Vds - Tension disruptiva entre puerta y fuente: 20 V Id - Corriente de drenaje continua: 2.7 A Rds On - Resistencia entre drenaje y fuente: 105 mOhms Configuracion: Dual Vgs th - Tension umbral entre puerta y fuente: 3 V Qg - Carga de puerta: 1.7 nC Temperatura de trabajo maxima: + 150 C Dp - Disipacion de potencia : 3.1 W Estilo de montaje: SMD/SMT Paquete / Cubierta: SO-8 Empaquetado: Reel Marca: Fairchild Semiconductor Transconductancia hacia delante - Min.: 5 S Temperatura de trabajo minima: - 55 C Serie: FDS89161
Condition:
New: A brand-new, unused, unopened, undamaged item in its original packaging (where packaging is applicable). Packaging should be the same as what is found in a retail store, unless the item is handmade or was packaged by the manufacturer in non-retail packaging, such as an unprinted box or plastic bag. See the seller's listing for full details. ...
Brand Fairchild Semiconducto
MPN MALAYSIA
Model FDS89161
Country/Region of Manufacture Malaysia

Directions

Similar products from General & Complementary Transistors

People who viewed this item also vieved

By clicking "Accept All Cookies", you agree to the storing of cookies on your device to enhance site navigation, analyze site usage, and assist in our marketing efforts.

Accept All Cookies