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N+ GaAs wafer, US $10.00 – Picture 0
N+ GaAs wafer, US $10.00 – Picture 0

N+ Gaas Wafer

US $10.00

  • Glenns Ferry, Idaho, United States
  • Jan 30th
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 One 50mm N+ GaAs wafer.  Unopened in foil package. Growth Method VGF Dopant Si (n-type) Wafer Shape Round DIA: 2" Surface Orientation (100)±0.5°   Dopant Si (n-type) Carrier Concentration (cm-3) ( 0.8-4) x 1018 Mobility (cm2/V.S.) ( 1-2.5) x 103 Etch Pitch Density (cm2) 100-5000   Wafer Diameter (mm) 50.8±0.3 Thickness (µm) 450±25 TTV [P/E] (µm)

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