RF MOSFET AMPLIFIER TRANSISTOR PD85035 STMicroelectronics, US $10.00 – Picture 0

RF MOSFET AMPLIFIER TRANSISTOR PD85035 STMicroelectronics, US $10.00 – Picture 1

Rf Mosfet Amplifier Transistor Pd85035 Stmicroelectronics

US $10.00

Cumana, Sucre, Venezuela
Jan 29th

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RF MosFET Amplifier PD85035 ORIGINALS Features ? Excellent thermal stability ? Common source configuration ? POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ? Plastic package ? ESD protection ? In compliance with the 2002/95/EC1 European directive Description The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD85035-E’s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. For more information, consult Datasheet IMPORTANT Import duties, taxes, and charges are not included in the item price or shipping cost. These charges are the buyer's responsibility. Please check with your country's customs office to determine what these additional costs will be prior to bidding or buying.

Condition:	New: A brand-new, unused, unopened, undamaged item in its original packaging (where packaging is applicable). Packaging should be the same as what is found in a retail store, unless the item is handmade or was packaged by the manufacturer in non-retail packaging, such as an unprinted box or plastic bag. See the seller's listing for full details. ...	Brand	STMicroelectronics
Country/Region of Manufacture	Venezuela
Model	STAC4932