Tk8a50da Toshiba - Mosfet N-ch Mos 7.5a 500v 35w Usa - K8a50da

US $6.39

  • Davenport, Iowa, United States
  • Jan 29th
This MOSFET carries a drain-source resistance of 760 mOhms in single configuration. It comes in an SC-67-3 package/case with an input capacitance measuring 700 pF. If you have any inquiries, please don't hesitate to ask! Fall time for this MOSFET is 11 ns, while its forward transconductance measures at least 1 S. Its gate-source threshold voltage is set at 4.4 V, while its gate charge measures 16 nC. Its gate-source breakdown voltage measures at 30 V, while its continuous drain current reaches 7.5 A. The factory pack quantity is 50, a typical turn-off delay time reaches 60 ns. This Toshiba MOSFET, the TK8A50DA, is up for bidding. This MOSFET can operate within a maximum temperature of +150 C and has a power dissipation of 35 W. It boasts an N-Channel transistor polarity and a drain-source breakdown voltage of 500 V. The minimum operating temperature is -55 C, while its rise time is 20 ns.
Condition:
New: A brand-new, unused, unopened, undamaged item in its original packaging (where packaging is applicable). Packaging should be the same as what is found in a retail store, unless the item is handmade or was packaged by the manufacturer in non-retail packaging, such as an unprinted box or plastic bag. See the seller's listing for full details. ...
Brand Toshiba
MPN TK8A50DA

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