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Transistor 2T825A p-n-p 160W 100V 2A, US $1000 – Picture 0
Transistor 2T825A p-n-p 160W 100V 2A, US $1000 – Picture 0

Transistor 2t825a P-n-p 160w 100v 2a

US $1000

  • Europa, Latvia
  • Jun 9th
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Transistor 2T825A p-n-p 160W 100V 2A  The structure of p-n-p     The maximum allowable (pulse) the collector-base in 100     The maximum allowed (pulsed) collector-emitter voltage of 100 V     The maximum permissible continuous (pulsed) current collector 20000 (40000) mA     The maximum permissible continuous power dissipation collector without heatsink (heatsink) (160) W     Static current gain of the bipolar transistor in the circuit with common emitter 500-18000     The reverse collector current <= 1000 mA     Cutoff frequency current gain in the common-emitter => 4 MHz     noise ratio of the bipolar transistor <2 dB

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