Transistor Igbt Ngd18n40clbt4

US $2.50

Hialeah, Florida, United States
Jan 29th

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Ignition IGBT 18 Amps, 400 Volts N–Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features • Ideal for Coil–on–Plug Applications • DPAK Package Offers Smaller Footprint for Increased Board Space • Gate–Emitter ESD Protection • Temperature Compensated Gate–Collector Voltage Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area • Low Threshold Voltage Interfaces Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage • High Pulsed Current Capability • Optional Gate Resistor (R G ) and Gate–Emitter Resistor (R GE ) • Emitter Ballasting for Short–Circuit Capability • Pb–Free Package is Available

Condition:	New: A brand-new, unused, unopened, undamaged item in its original packaging (where packaging is applicable). Packaging should be the same as what is found in a retail store, unless the item is handmade or was packaged by the manufacturer in non-retail packaging, such as an unprinted box or plastic bag. See the seller's listing for full details. ...	Brand	ON SEMICONDUCTOR
MPN	THAILAND
Model	NGD18N40CLBT4
Country/Region of Manufacture	Thailand