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Transistors silicon 2T831G (KT831G) USSR Lot of 3 pcs, US $220 – Picture 0
Transistors silicon 2T831G (KT831G) USSR Lot of 3 pcs, US $220 – Picture 0

Transistors Silicon 2t831g (kt831g) Ussr Lot Of 3 Pcs

US $220

  • Tomsk, Tomsk region, Russian Federation
  • Jun 6th
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- Maximum collector-base voltage for a given reverse current collector and emitter open circuit (Ukbo max): 100 V - Transistor structure: npn - Constant power dissipation collector with the heat sink (Pk t max): 5W - Static current transfer ratio of the transistor circuit for a common-emitter (h21e): 2 - Maximum voltage emitter-base reverse current at a given emitter and collector open circuit (Uebo max): 12 We have a variety of other items made in USSR available. Payment is accepted through PayPal only. - Saturation resistance between the collector and emitter (Rke us): no more than 0.6 Ohms The 2T831G transistors have the following specifications: - Cutoff frequency of current transfer ratio of the transistor for the circuit with common emitter (fgr): no less than 4 MHz - Maximum permissible continuous collector current (Ik max): 2 A Lot of 3 pcs - 2T831G (KT831G) Silicon Transistors from USSR This lot of 3 pcs contains new, never used, NOS (New Old Stock) 2T831G (KT831G) Silicon Transistors. These transistors feature mezaepitaksialno-planar structures and are npn amplifiers.

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