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[10 pcs].2SK3562 Genuine Toshiba Transistor 600V 6A 40W N-chn MOS FET mark K3562, US $370 – Picture 0
[10 pcs].2SK3562 Genuine Toshiba Transistor 600V 6A 40W N-chn MOS FET mark K3562, US $370 – Picture 0

[10 Pcs].2sk3562 Genuine Toshiba Transistor 600v 6a 40w N-chn Mos Fet Mark K3562

US $370

  • Warszawa, mazowieckie, Poland
  • Jun 9th
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    [10 pcs] 2SK3562  Transistors 600V 6A 40W N-chn MOS FET marking K3562 manufactured by Toshiba Specification Mounting Style: Through Hole Housing: TOSHIBA 2-10U1B Key Features • Low drain-source ON-resistance: RDS (ON) = 0.9 ? (typ.)  • High forward transfer admittance: |Yfs| = 5.0 S (typ.)  • Low leakage current: IDSS = 100 ?A (max) (VDS = 600 V) • Drain-source voltage VDSS : 600 V • Drain current DC  ID :  6A  • Drain power dissipation (Tc = 25°C) PD : 40W Buyer receives 10 Transistors manufactured by Toshiba. If you want to buy more items than available on this auction send me a message. On 16-Mar-15 at 20:21:01 GMT, seller added the following information:
“NOS-New Old Stock , parts never used”
MPN 2SK3562
Unit Type Unit
Unit Quantity 10
Brand Toshiba

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