gate 20 for sale, brand-new and used.

ARGUS / CORDEX Model CXRC 48-650W 120V Power Module for Cordex 19" or 23" Integrated Shelf System

Power Russian Triac 320A 1000V TS 171-320-10 -symmetrical Th UNIPOLAR TRIGGERING (W 22x1.5mm)

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FF600R12KL4C IGBT Modules 1200V 600A DUAL Infineon Product Category: IGBT Modules RoHS: No Brand: Infineon Technologies Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max:

6x SD213 SIGNETICS High-Speed Analog N-Channel DMOS FETs ....... Features High Input to Output Isolation - 120dB Low On Resistance - 30 Ohm Low Feedtrough and Feedback Transients L

Item description IR3103 IR PWR MOD 180W GATE DRIVER 11-SIP Q'TY:1PC/LOT

*** NEW & ORIGINAL *** 8/PKG

Untitled Document 10pcs x

HEPF2004 NChannel Dual-Gate Tetrode MOSFET Discontinued Part Number = HEPF2004 Manufacturer Name = Motorola Description = N-Channel, Dual-Gate Tetrode MOSFET, Metal-oxide Semiconductor FET (MOSFET) V(BR)DSS (V) = 20 V(BR)GSS (V) = 999 I(D) Abs. Drain Current (A) = 50m Absolute Max. Power Diss.

This listing is for 1qty new and original IGBT by Infineon. *95% of all orders ship same day if placed before 3:00 EST.*Overnight delivery avail, please email before ordering.

100pcs IRFR9014 P-CHANNEL Single-Gate MOSFET 60 Volt 5.1 Amp IN D PKG. BY INTERNATIONAL RECTIFIER, NEW PARTS. FULL SPECS HERE http://www.vishay.com/docs/91277/91277irf.pdf Check out my other items!

N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicongate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coeffici

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20pcs IRF2807 IRF2807PBF MOSFET N-Channel 82A 75V IR

2x National Semiconductor 2N3955 Low Noise, Low Drift, Monolithic Dual N-Channel JFET The 2N3955 family are matched JFET pairs for differential amplifiers. The 2N3955 family of general purpose JFETs is characterized for low and medium frequency differential amplifiers requiring low offset voltage, drift, noise and capacitance The 2N3955 family exhibits low capacitance - 6