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KT3102GM = BCY57 Transistors silicon USSR Lot of 100 pcs, US $250 – Picture 0
KT3102GM = BCY57 Transistors silicon USSR Lot of 100 pcs, US $250 – Picture 0

Kt3102gm = Bcy57 Transistors Silicon Ussr Lot Of 100 Pcs

US $250

  • Tomsk, Tomsk region, Russian Federation
  • Jun 6th
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KT3102GM = BCY57  Transistors silicon   USSR Lot of 100 pcs New, never used  / NOS / New Old Stock Transistors KT3102GM silicon epitaxial planar structures npn universal.  Designed for use in low-frequency devices with low noise switching, amplifying and generating units of medium and high frequencies.  KT3102GM:  • The structure of transistor: npn  • Pk max - Constant collector power dissipation: 250 mW;  • fgr - Cutoff frequency of current transfer ratio of the transistor for the circuit with common emitter: not less than 300 MHz;  • Ukbo max - The maximum collector-base voltage for a given reverse current collector and emitter open circuit: 20 V;  • Uebo max - Maximum voltage emitter-base reverse current at a given emitter and collector open circuit: 5;  • Ik max - The maximum permissible continuous collector current of 100 mA;  • Ikbo - Reverse collector current - the current through the collector junction reverse voltage for a given collector-base and emitter open output: less than 0.015 mA (50 V);  • h21e - Static current transfer ratio of the transistor small signal circuits for common-emitter: 400 ... 1000;  • CK - Capacity of the collector junction: no more than 6 pF;  • Rm - Noise factor of the transistor: no more than 10 dB at 1 kHz • tc - time constant of the feedback loop at high frequency: less than 100 ps We can supply other items made in USSR. We have more such items in stock. Payment: We accept PayPal Only!

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