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KT826V Silicon transistor 700V 1A hfe 10-120 Lot of 5 pcs USSR, US $170 – Picture 0
KT826V Silicon transistor 700V 1A hfe 10-120 Lot of 5 pcs USSR, US $170 – Picture 0

Kt826v Silicon Transistor 700v 1a Hfe 10-120 Lot Of 5 Pcs Ussr

US $170

  • St. Peterburg, St. Peterburg, Russian Federation
  • Jun 9th
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KT826V (Cyrillic: KT826B) Silicon transistor 700V 1A hfe 10-120   USSR   Lot of 5 pcs New, never used  / NOS / New Old Stock   KT826V Silicon Transistors mezaplanarnye structure npn switching. Designed for use in switching devices, DC-DC converters, high voltage stabilizers.   The main technical characteristics of the transistor KT826A: • The structure of the transistor: npn; • Pk t max - Dissipated power collector with heat: 15 W; • fgr - Cut-off frequency of the transistor current gain for the common-emitter: not less than 6 MHz; • Uker max - maximum collector-emitter voltage at a given current collector and a given resistance in the circuit of the base-emitter voltage: 700 V (0.01 ohms); • Uebo max - Maximum voltage emitter-base junction reverse current at a given emitter and collector open circuit: 5 V; • Ik max - Maximum DC Collector Current: 1 A; • Ikbo - Reverse collector current - the current through the collector junction reverse voltage for a given collector-base and open emitter output: less than 2 mA (700V); • h21e - Static current transfer ratio of the transistor to the common-emitter: 10 ... 120; • CK - collector junction capacity: no more than 25 pF; • Rke us - saturation resistance between the collector and emitter: no more than 5 ohms

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