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Transistor silicon KP907A USSR Lot of 10 pcs, US $130 – Picture 0
Transistor silicon KP907A USSR Lot of 10 pcs, US $130 – Picture 1
Transistor silicon KP907A USSR Lot of 10 pcs, US $130 – Picture 2
Transistor silicon KP907A USSR Lot of 10 pcs, US $130 – Picture 3
Transistor silicon KP907A USSR Lot of 10 pcs, US $130 – Picture 4
Transistor silicon KP907A USSR Lot of 10 pcs, US $130 – Picture 0
Transistor silicon KP907A USSR Lot of 10 pcs, US $130 – Picture 1
Transistor silicon KP907A USSR Lot of 10 pcs, US $130 – Picture 2
Transistor silicon KP907A USSR Lot of 10 pcs, US $130 – Picture 3
Transistor silicon KP907A USSR Lot of 10 pcs, US $130 – Picture 4

Transistor Silicon Kp907a Ussr Lot Of 10 Pcs

US $130

  • St. Peterburg, St. Peterburg, Russian Federation
  • Jun 9th
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Transistor silicon KP907A     USSR   Lot of 1 pcs New, never used  / NOS / New Old Stock/ KP907A  Transistors planar silicon insulated-gate field-and n-channel type.  KP907A FETs are used to amplify and generate signals at frequencies up to 1500 MHz as well as for use in high-speed switching devices in the nanosecond range.  KP907A:  • Structure transistor: and an insulated gate n-channel;  • RCI t max - Maximum power dissipation Drain-source to the heat sink: 11.5 W;  • U ds max - The maximum drain-source voltage: 60 V;  • Uzs max - Maximum gate-drain voltage: 70 V;  • Uzi max - The maximum gate-source voltage: 30 V;  • Ic - Drain current (DC): 2.7 A;  • Ic early - Initial drain current: 100 mA;  • Ic ost - Residual Current: not more than 10 mA;  • S - Mutual conductance: 110 ... 200 mA / V (20V, 0.5A);  • S12i - Capacity feedback in the common-source with a short circuit at the input AC: not more than 3 pF;  • Ku.r - Power gain: not less than 4 dB at 1 GHz  

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