Plasma Etcher, Rie System, Plasma Asher, Plasma Etcher, Plasma Cleaner

US $1200

Tempe, Arizona, United States
Jun 4th

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· The ST1200 chamber is a two piece clam-shell type. The material to be etched is placed on the powered bottom electrode. Designed to ensure anisotropic etching and maximize selectivity, uniformity, and speed.. · Process gas showerhead is designed for laminar flow of process gas over the entire etching area. · Annular gas exit through the bottom/center throat of the lower chamber--to ensure equal and proper gas flow without turbulence (improved uniformity and less particles). · The size ratio of the small powered electrode to the larger ground electrode produces a negative DC bias which enhances ion bombardment and anisotropy. · A dark space shield focuses the plasma on the bottom electrode, thus optimizing power utilization. · The bottom electrode is water cooled to maintain the sample at a low temperature during processing. · 10” (254mm) diameter process chamber--can process 8” (200mm) or smaller wafers or substrates. · Variable electrode spacing · Chamber is equipped with a treated quartz viewing window for observation of the plasma process. · Standard four (4) digital mass flow controllers · Baratron pressure read-back · Throttle valve for controlling chamber pressure independent of chamber pressure · Nitrogen chamber purge—for particle reduction and sample integrity · Soft gas introduction and soft vent/purge to reduce particles and protect substrate(s) · 600 watt, 13.56MHz RF power (options for 1,200 or 3,000 w) · Production Automatic RF matching network with advanced system grounding · Automatic optical end point control · DC bias readout Software: · Touchscreen control · System preprocess self-check (MFC’s, baratron, pressure, etc.) · Multiple step recipes—easy to configure · Adjustable gas stabilization times, confirm MFC linearity · Data logging, store/download historical records · Monitor RF on/off times during process, pressure curves during process · Access passwords for process, equipment engineering, and operator · Stable Linux based OS and application software · USB flash memory permits recipes to be used in multiple ST1200 systems Options: · 200 or 400 l/sec turbo pump with isolation valve (sits directly under the chamber) · 1,200 watt, or 3,000 watt generator · 45 cfm vacuum pump · Laser or mass spectrometer end point control · Inductively coupled Plasma (ICP) for faster and more sophisticated applications requiring more reactive species · Heated chuck, Stainless steel or anodized aluminum chamber · Dual generator configuration · Lid lift assist Specifications: Gases: SF6, CF4, He, O2 Etch Rate is 2,000 Angstroms/min for Si3N4 and 1,500 Angstroms/min for SiO2 Uniformity: 100mm : ± 3% (max-min/(2)average) 150mm : ± 5% (max-min/(2)average Applications: Contact Slope Etch Via Etch BPSG Etch TEOS Etch Thermal Oxide Etch LTO Etch Thermal Oxide Etch LPCVD Nitride Etch PECVD Nitride Etch Descum Planarization Photo Resist Strip (with heater) Low Temperature Photo Resist Ashing over Oxides, Poly, Al, W, Ti or Moly Trench Rounding Backside Poly, Nitride, Oxide Nitride Pattern Removal Facilities: Plumbed Gases…O2, CF4, He, SF6 Electrical Requirements: 208VAC, 3-Phase, 60Hz, 30Amps Cooling: Dowfrost or equivalent Sold as a new system with a full year warranty and installation turn-on support and training. We can arrange shipping anywhere in the world. The Customer pays the shipping. Lead time is 14 weeks. 480-621-8405 GLOW RESEARCH