Transistor Igbts Irgpf30f

US $6.99

Hialeah, Florida, United States
Mar 8th

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D eSpecifications, Features, Applications Features · Switching-loss rating includes all "tail" losses· Optimized for medium operating frequency to 10kHz) See Fig. 1 for Current vs. Frequency curve Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. VCES IC 100°C ICM ILM VGE EARV 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, or M3 screw. RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 900 V VGE 20 V VGE 1.0A 0.83 V/°C VGE = 20A See Fig. 3.0 5.5 VCE = VGE, 250µA -11 mV/°C VCE = VGE, 6.9 S VCE 250 µA VGE 900V 1000 VGE ±100 nA VGE = ±20V Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 7.7 nC VCC = 400V See Fig. 8 12 VGE 160 280 VGE R G Energy losses include "tail" 0.67 mJ See Fig. 720V 260 VGE 23 250 Energy losses include "tail" 2.0 mJ See Fig. 13 nH Measured 5mm from package 560 VGE 50 pF VCC = 30V See Fig. = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. ) VCC=80%(V CES), 23, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot. (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) Igbt

Condition:	New: A brand-new, unused, unopened, undamaged item in its original packaging (where packaging is applicable). Packaging should be the same as what is found in a retail store, unless the item is handmade or was packaged by the manufacturer in non-retail packaging, such as an unprinted box or plastic bag. See the seller's listing for full details. ...	Brand	International Rectifier Corp.
MPN	united states
Model	IGBTs irgpf30f
Country/Region of Manufacture	United States